等离子体技术制备氧化硅阻隔层薄膜的研究  

Preparation of SiO_x Barrier Coatings by Plasma Deposition

作　　者：陈强[1] 孙运金[1] 周美丽[1] 韩而立[1] 杨丽珍[1] 张跃飞[1] 李朝阳[1] 许文才[1] 

机构地区：[1]北京印刷学院印刷与包装材料物理与技术北京市重点实验室,北京102600

出　　处：《包装工程》2008年第10期8-11,14,共5页Packaging Engineering

基　　金：国家自然科学基金(1775017);北京市人才强校拔尖人才计划(PHR(IHLB))资助

摘　　要：采用无任何污染的等离子体技术,进行SiOx薄膜的沉积:电子束蒸发氧化硅、离子源辅助电子束蒸发氧化硅、磁控溅射沉积氧化硅、离子源辅助磁控溅射沉积氧化硅、等离子体化学气相沉积SiOx等,并对所沉积的薄膜进行结构性能的比较研究。SiOx coatings on plastic surface for gas and humid barrier purpose were deposited by plasmas. In order to evaluate the plasma technologies, several methods were carried out, such as electron beam （EB） evaporation, ionic enhanced EB evaporation, magnetron＇sputtering, and ionic enhanced magnetron sputtering , as well as plasma enhanced chemical vapor deposition （PECVD）. It is fund that each source showed its advantage and disadvantage, but PECVD demonstrated a better WVTR and OTR values than others. The possible reason was explained.

关 键 词：等离子体技术 SIOX薄膜 高阻隔包装 

分 类 号：TB43[一般工业技术] TB484