磁控溅射陶瓷薄膜(SiOx)阻隔性机理的研究  

Study of the Barrier Mechanism of Ceramic Thin Film by Magnetron Sputtering

作　　者：刘壮[1] 林晶[1] 孙智慧[1] 高德[1] 

机构地区：[1]哈尔滨商业大学,哈尔滨150028

出　　处：《包装工程》2008年第10期12-14,共3页Packaging Engineering

基　　金：“十一五”国家科技支撑重大项目(2006BAD05A05);印刷包装材料与技术北京市重点实验室开放课题(KF200705)

摘　　要：研究了磁控溅射镀陶瓷薄膜(SiOx)使PET基体阻隔性提高的机理,并对SiOx层的堆积结构做了假设及理论分析,结合SEM形貌表明:磁控溅射SiOx层存在层状结构及针孔随机分布,阻隔性的提高可由努森扩散和层流两种机理加以解释,即在一定的压力差下,阻隔性提高决定于针孔的分布、陶瓷层厚度以及SiOx层数。SiOx films were deposited on the PET surface by magnetron sputtering to enhance its barrier, and the mechanism of the barrier enhancement was studied. The supposition and theoretical analysis to the deposited structure of SiOx films were made. SEM observation showed that there are laminated structures and random distributed pinholes. The impediment enhancement can be explained by Knudsen diffusion and laminar flow, namely under certain pressure difference, the impediment enhancement is decided by the pinhole distribution, ceramic level thickness as well as the quantities of SiOx layers.

关 键 词：磁控溅射 陶瓷膜 努森扩散 层流 

分 类 号：TB43[一般工业技术] TB484.5