A Submicron InGaAs/InP Heterojunction Bipolar Transistor with f_t of 238GHz  

截止频率为238GHz的亚微米InGaAs/InP异质结双极晶体管(英文)

作　　者：金智[1] 程伟[1] 刘新宇[1] 徐安怀[2] 齐鸣[2] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2008年第10期1898-1901,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2002CB311902)~~

摘　　要：A non-micro-air-bridge InP-based heterojunction bipolar transistor （HBT） is fabricated. A very small emitter side etching （〈100nm） is developed and makes a submicron InP-based HBT possible. The current gain cutoff frequency is as high as 238GHz for the submicron HBT with an emitter area of 0.8μm × 15μm due to the reduction of emitter width. A base-collector over-etching technology is developed,resulting in a reduction of base-collector junction area and an increase in the maximum oscillation frequency. A very high Kirk current density of 3. 1mA/μm^2 is obtained. To the best of our knowledge,the current gain cutoff frequency is the highest among three-terminal devices in China and the Kirk current density is also the highest in HBTs reported in China. This is very helpful for the application of HBTs in ultra high-speed circuits.研制成功了一种无微空气桥的亚微米InP基异质结双极晶体管(HBT).发展了小于100nm的发射极侧向腐蚀工艺,实现了亚微米的InP基HBT.发射极宽度的减小有效提高了频率特性,发射极面积为0.8μm×15μm的HBT的电流增益截止频率达到了238GHz.发展了基极-集电极的侧向过腐蚀工艺,有效减小了结面积,提高了最大振荡频率.Kirk电流密度达到了3.1mA/μm2.据我们所知,电流增益截止频率是目前国内三端器件中最高的,Kirk电流密度是国内报道的HBT中最高的.这对于HBT器件在超高速电路中的应用具有十分重要的意义.

关 键 词：lnP heterojunction bipolar transistor PLANARIZATION high frequency 

分 类 号：TN322.8[电子电信—物理电子学]