掺Sb的ZnO单晶的缺陷和性质研究  

Defects and Properties of Antimony-Doped ZnO Single Crystal

作　　者：张瑞[1] 张璠[1] 赵有文[1] 董志远[1] 杨俊[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2008年第10期1988-1991,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60736032)~~

摘　　要：采用化学气相传输法生长了掺Sb的ZnO体单晶,生长温度为950℃.与非掺ZnO单晶相比,掺Sb后ZnO单晶仍为n型,其自由电子浓度明显升高.X射线光电子能谱(XPS)测量结果表明,掺入的Sb在ZnO单晶中可能占据了Zn位,或处于间隙位置,形成了施主.利用光致发光谱(PL)测量发现掺Sb后ZnO单晶发出蓝光,该蓝色荧光与浅施主有关.这些结果表明在高温生长条件下,掺Sb后ZnO单晶中产生了高浓度的施主缺陷,因而难以获得p型材料.Sb-doped ZnO single crystal has been grown at 950℃ by the chemical vapor transport method. Compared to undoped ZnO, the Sb-doped ZnO single crystal is still n-type with an apparent increase of free electron concentration. X-ray photoelectron spectroscopy （XPS） measurement results suggest a possible occupation of the Zn site of the doped Sb in the ZnO single crystal, resulting in the formation of a donor. Blue emission is observed from the PL spectrum of the Sb doped ZnO single crystal,which is related with a shallow donor defect in ZnO. The results indicate that a high concentration of donor defects forms in ZnO after Sb doping at high temperature,making it difficult to obtain p-type material.

关 键 词：ZNO 单晶 掺杂 缺陷 

分 类 号：TN304.21[电子电信—物理电子学]