P型单晶硅片在KOH溶液中腐蚀行为的电化学研究  

Electrochemical Study on Corrosion Behaviors of p-silicon Wafers in KOH Solutions

作　　者：宋晓岚[1] 张晓伟[1] 徐大余[1] 喻振兴[1] 邱冠周[1] 

机构地区：[1]中南大学资源加工与生物工程学院,长沙410083

出　　处：《材料工程》2008年第10期126-131,共6页Journal of Materials Engineering

基　　金：科技部国际科技合作项目资助(2005DFBA028);教育部大学生创新性实验计划项目资助(LA07023)

摘　　要：采用电化学极化测量技术研究了p（100）和p（111）硅片在碱性KOH溶液中的腐蚀行为，考察了KOH溶液浓度、温度和硅片表面缝隙等因素对腐蚀行为的影响。结果表明：在室温下当KOH浓度为5～6mol／L时硅片腐蚀速率最大；随着KOH腐蚀液温度增加，腐蚀速率增大，在50℃左右腐蚀速率增加显著；硅片表面缝隙会加剧硅的局部腐蚀，在同等实验条件下缝隙腐蚀速率比均匀腐蚀快一个数量级。The corrosion behaviors of p-type （100） and p-type （111） silicon wafers etched in KOH so- lutions were investigated by using electrochemical DC polarization techniques and the influences of the KOH solution temperature, concentration and surface crevices on the corrosion behaviors of silicon wafers were studied. The results reveal that corrosion rate reach the maximum when the KOH con- centration is 5-6 mol/L at room temperature for p-type （100） and p type （111） silicon. With solution temperature increasing, the corrosion rate increases, and at 50℃ the corrosion rate increases significantly. Crevice exacerbates the corrosion rate of local silicon. The corrosion rate will be an order of magnitude faster than the uniform corrosion under the same conditions.

关 键 词：P型单晶硅片 腐蚀行为 极化曲线 缝隙腐蚀 

分 类 号：TB34[一般工业技术—材料科学与工程]