镱铒共掺Al2O3薄膜上转换机理及其温度特性  

Up-conversion mechanisms of Yb-Er co-doped Al_2O_3 film and its temperature characteristics

作　　者：李成仁[1] 明成国[1] 李淑凤[2] 丁建华[2] 王宝成[1] 张丽[1] 

机构地区：[1]辽宁师范大学物理与电子技术学院,大连116029 [2]大连理工大学物理与光电工程学院,大连116024

出　　处：《物理学报》2008年第10期6604-6608,共5页Acta Physica Sinica

基　　金：辽宁省科技厅基金(批准号:20062137)资助的课题~~

摘　　要：采用中频磁控溅射法制备了镱铒共掺Al2O3薄膜,铒镱掺杂浓度分别为0.3%,3.6%(摩尔分数,全文同).讨论了三价铒离子529 nm和549 nm光致发光的上转换机理.在291.8—573.3 K温度区间测量了两绿上转换光谱荧光强度比的温度特性,拟合表达式为R=5.37exp(-738/T).366 K温度时灵敏度最大,为0.0039 K-1.结果表明镱铒共掺Al2O3薄膜适合作为小型、高温和高灵敏的光学温度传感材料.Yb-Er co-doped Al2O3 film was prepared on SiO2/Si substrate using a medium frequency magnetron sputtering system, and the concentrations of dopant Er and Yb ions were 0.3% and 3.6%, respectively. The up-conversion mechanisms of Er^3＋ photoluminescence at 529 and 549 nm were discussed. The fluorescence intensity ratio of the green up-conversion spectra were measured in the temperature range of 291.8--573.3 K, and the temperature characteristics were fitted as R = 5.37exp（ -738/ T）. At the temperature of 366 K, the sensitivity has the maximum value of 0.0039 K^-1 . The results show that the Yb ： Er ： Al2O3 film is a suitable material for minitype, high-sensitivity and high-temperature optical sensors.

关 键 词：镱铒共掺Al2O3薄膜 中频磁控溅射 上转换 荧光强度比 

分 类 号：O484[理学—固体物理]