(CdZnTe,ZnSeTe)/ZnTe复合量子阱中激子隧穿过程  

Exciton tunnelling in(CdZnTe,ZnSeTe)/ZnTe complex quantum wells

作　　者：金华[1] 刘舒[1] 张振中[2] 张立功[2] 郑著宏[2] 申德振[2] 

机构地区：[1]中国人民公安大学安全防范系,北京102416 [2]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,长春130033

出　　处：《物理学报》2008年第10期6627-6630,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60278031,60176003和60376009)资助的课题~~

摘　　要：设计了(CdZnTe,ZnSeTe)/ZnTe复合量子阱结构,并用吸收光谱、室温光致发光谱和飞秒脉冲抽运-探测方法研究了该复合结构中的激子隧穿过程.分别测量了该结构中CdZnTe/ZnTe量子阱层和ZnSeTe/ZnTe量子阱层中激子衰减时间.观察到从CdZnTe/ZnTe量子阱层向ZnSeTe/ZnTe量子阱层的快速激子隧穿,隧穿时间为5.5 ps.A new type of （CdZnTe, ZnSeTe）/ZnTe complex quantum wells was designed. Exciton tunneling process was investigated in this complex structure using absorption spectra, photoluminescence （PL） spectra and pump-probe measurements. The exciton decay time was measured in CdZnTe/ZnTe quantum well layers and ZnSeTe/ZnTe quantum well layers, respectively. And a fast exciton tunneling from CdZnTe/ZnTe quantum well to ZnSeTe/ZnTe quantum well was observed by transient differential transmission. The tunneling time is 5.5 ps.

关 键 词：(CdZnTe ZnSeTe)/ZnTe复合量子阱 激子 隧穿 抽运-探测 

分 类 号：TN301.1[电子电信—物理电子学]