改进的用于AMOLED的移位寄存器的设计与仿真(英文)  

The Design and Simulation of an Improved Shift Register for AM-OLED

作　　者：丁媛媛[1] 司玉娟[1,2] 郎六琪[3] 

机构地区：[1]吉林大学通信工程学院,吉林长春130022 [2]吉林大学珠海学院电子工程系,广东珠海519041 [3]吉林大学珠海学院计算机科学与技术系,广东珠海519041

出　　处：《发光学报》2008年第5期795-799,共5页Chinese Journal of Luminescence

基　　金：the Jilin Science and Technology Development Foundation of China(20050515);the Science and Technology Development Plan of Zhuhai(PC20051011,PC20061009);the National Natural Science Foundation of China(60476024)~~

摘　　要：p-type技术能够简化低温多晶硅TFT的制作过程。基于这个原因,本文提出了一种改进的利用p-type多晶硅TFT构成的移位寄存器结构,它可以作为AMOLED或者AMLCD外围驱动电路的一部分被集成到显示屏的衬底上。改进的移位寄存器由6个时钟控制,每个单元包含6个p-type多晶硅TFT。本文利用HSPICE进行仿真,验证了电路功能的正确性。利用韩方在多晶硅制作方面的优势,已经利用以上技术完成了96×3×128的AMOLED显示屏的制作。The fabrication process of low temperature poly-Si （LTPS） TFT （Thin Film Transistor） can be simplified by p-type technology. In this paper, an improved shift register scheme is proposed, which only consists of p-type poly-Si TFTs. It can be integrated on the panel of AMOLED or AMLCD as a part of peripheral driving circuitry. The shift register is controlled by 6 clock signals and every unit is composed of 6 p-type poly-Si TFTs. In order to verify the correction of the proposed scheme, circuit simulation using HSPICE has been done. Utilizing the advantage of Korea on making poly-Si TFT, we have already fabricated 96 × 3 × 128 AMOLED by using the proposed design.

关 键 词：移位寄存器 P沟道技术 多晶硅薄膜晶体管 有源OLED HSPICE仿真 

分 类 号：TN383.1[电子电信—物理电子学]