SiN钝化膜对Si衬底GaN基蓝光LED性能影响  

The Influence of SiN Passivation Layer to the GaN Based Blue LED on Si Substrate

作　　者：邱冲[1] 刘军林[1,2] 郑畅达[1,2] 姜乐[1] 江风益[1,2] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,江西南昌330047 [2]晶能光电江西有限公司,江西南昌330096

出　　处：《发光学报》2008年第5期840-844,共5页Chinese Journal of Luminescence

基　　金：国家“863”计划纳米专项(2003AA302160);国家“863”计划光电子课题(2005AA311010)资助项目

摘　　要：利用等离子辅助化学气相沉积(PECVD)系统在垂直结构Si衬底GaN基蓝光LED芯片上生长了SiN钝化膜,并对长有钝化膜及未作钝化处理的LED在不同条件下进行了老化实验,首次研究了SiN钝化膜对垂直结构Si衬底GaN基蓝光LED可靠性的影响。实验发现:经过30mA、85℃、24h条件老化后,未作钝化处理的Si衬底GaN基蓝光LED的平均光衰为11.41%,而长有SiN钝化膜的LED平均光衰为6.06%,SiN钝化膜有效地改善了LED在各种老化条件下的光衰,另外,SiN钝化膜缓解了Si衬底GaN基蓝光LED老化过程中反向电压(Vr)的下降,但对老化后LED的抗静电击穿能力(ESD)没有明显的影响。Currently GaIN based blue light emission diode （LED） has already been widely used in spotlight of cars, back light of mobile phones, outdoor displays, etc. As the market of its applications is rapidly enlarged, the reliability of GaN based LED becomes the top issure of wide concern. In order to improve the reliability of vertical GaN based blue LED on Si substrate, SiN passivation layer was deposited by PECVD on the chip of LED, stresses in different condition were carried out to both passivated and unpassivated chips and encapsulated LEDs, their optical and electrical properties were investigated. After the aging under the condition of 30 mA, 85 ℃ for 24 hours,the average luminous decay for encapsulated LEDs without SiN layer was 11.41%＇, but 6.06% for passivated one, lower luminous decay of SiN passivated GaN based blue LED was also found at the aging condition of RT, 30 mA, 96 hours, this was never reported in previous dissertations. In the aging experiment of chips under the 500 mA, RT condition, higher reverse voltage .of SiN passivated LED was found after aging compared with that without SiN layer, but no obvious improvement for ESD property.

关 键 词：蓝光LED GaN 硅衬底 SIN 钝化 光衰 

分 类 号：O482.31[理学—固体物理] TN312.8[理学—物理]