InGaAs/InP雪崩光电探测器异质结结构优化分析  

Simulation and Optimizing for Heterostructure of InGaAs/InP Avalanche Photo-detectors

作　　者：雷玮[1] 郭方敏[1] 胡大鹏[1] 朱自强[1] 褚君浩[1] 

机构地区：[1]华东师范大学信息学院极化材料与器件教育部重点实验室,上海200062

出　　处：《激光与红外》2008年第10期1000-1003,共4页Laser & Infrared

基　　金：科技部重大项目(No.2006CB932802)资助

摘　　要：根据一个吸收层、电荷层和倍增层分立结构(SACM)的InGaAs/InP雪崩光电探测器,减薄电荷层的厚度而引入渐变层,保持材料与厚度不变,改进成吸收层、电荷层、过渡层与倍增层分立结构(SAGCM)的雪崩光电探测器,优化了吸收层与倍增层间材料的异质结结构。采用APSYS软件对其能带结构、电场分布以及暗电流和1.55μm的脉冲光响应电流、增益等进行仿真与计算。对比两种器件的性能,结果分析表明,改进后的器件获得更低的穿通值电压,降低探测器在低偏压下的漏电流,同时得到更大的增益。An InGaAs/InP avalanche photodetector （APD）with InGaAsP grade layer and InP charge layer between the InGaAs absorption and InP multiplication region （SAGCM-APD） was simulated. APSYS software was employed for the simulation of energy band, electric field, dark current and current plus response at the wavelength 1. 55μm. Results were compared with a sectional charge layer SACM-APD which has the same materials and device thickness. The simulations demonstrated that the heterostructure composed by grade layer and charge layer in SAGCM-APD could make lower leakage current at the lower reverse bias voltage relatively to SACM-APD. A lower punch-through voltage, breakdown voltage and the greater gain also obtained in SAGCM compared to SACM structure.

关 键 词：雪崩光电探测器 SACM结构 SAGCM结构 暗电流 增益 APSYS 

分 类 号：TN215[电子电信—物理电子学]