应力补偿型InGaN-AlGaN量子阱发光二极管结构优化研究  

Study on Structure Optimization of Strain-compensated InGaN-AlGaN Quantum Well Light-emitting Diode

作　　者：李为军[1] 张波[1] 徐文兰[2] 陆卫[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]华东师范大学信息科学技术学院,上海200062

出　　处：《激光与红外》2008年第10期1023-1026,共4页Laser & Infrared

基　　金：国家自然科学基金(No.10474020);中国科学院知识创新工程青年人才领域前沿项目(No.C2-14)资助

摘　　要：薄的应力补偿层AlGaN的引进对InGaN量子阱结构的发光二极管输出功率和内量子效率的影响被详细考察。由理论模拟结果得知,不管是在低温还是高温,合适的应力补偿层引进都能极大改善LED器件输出功率和内量子效率。应力补偿层AlGaN的加入导致器件漏电流的降低被认为是器件效能提高的主要原因。定量优化AlGaN应力补偿层的厚度和其中Al的含量在这里也被探讨研究。计算结果表明,当应力补偿型InGaN-AlGaN量子阱结构中Al-GaN厚度为1nm,Al含量为0.25时,能够获得最大的发光功效和内量子效率。Output performance and internal quantum efficiency of an InGaN light emitting diode （LED）using thin Al- GaN as strain-compensated layer is theoretically investigated. The result shows that a significant improvement can be obtained when the strain-compensated InGaN-AlGaN quantum well structure is utilized as quantum well active layer at low and high temperature. The enhancement of the LED performance is mainly attributed to the decrease in electronic leakage current. Qualitative optimization of the thickness and Al composition in the AlGaN strain-compensated layer is also studied. The calculation indicates that the strain-compensated InGaN-AlGaN quantum well structure LED can provide better output characteristics and internal quantum efficiency when the AlGaN layer thickness is 1 nm and Al comnosition is 25%.

关 键 词：应力补偿型量子阱 INGAN 发光二极管 数值模拟 

分 类 号：TN312.8[电子电信—物理电子学]