超声喷雾法制备In_2S_3薄膜及后续快速热处理对薄膜性能的影响  

Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

作　　者：陈雄飞[1] 汪雷[1] 杨德仁[1] 

机构地区：[1]浙江大学材料科学与化学工程系硅材料国家重点实验室,杭州310027

出　　处：《人工晶体学报》2008年第5期1069-1072,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60544006);国家"973"计划(No.2007CB613403)资助

摘　　要：采用超声喷雾法制备了硫化铟（In2S3）薄膜，并考察了后续快速热处理（rapid thermal process，RTP）对硫化铟薄膜性能的影响。采用扫描电镜（SEM），X射线衍射（XRD）等手段对薄膜的形貌、结构、透射率等性质进行了表征。结果表明：超声喷雾法制备的In2S3薄膜均匀致密，采用RTP热处理可提高薄膜的结晶性能，但对薄膜的透光性影响较小。通过计算可以得出薄膜的禁带宽度约为2．25—2．38eV。The In2S3 films have been prepared by ultrasonic spray pyrolysis technique. The morphology, structure and optical transmittance of InzS3 films have been characterized by XRD, SEM and speetrophotometer. The influence of post deposition annealing temperature on the film properties were studied. The results show that uniform and compact In2S3 films can be obtained by ultrasonic spray pyrolysis method. The post RTP can enhance crystallization of the In2S3 films with weak influence on optical transmittance. The band gap of the InzS3 thin films is about 2.25 - 2.38 eV.

关 键 词：硫化铟 快速热处理 超声喷雾法 

分 类 号：O484[理学—固体物理]