硅锆复合包覆BiVO4晶体的表征及其机理研究  

Characterization and Mechanism of SiO_2·ZrSiO_4 Coated BiVO_4 Crystal

作　　者：张萍[1] 王焕英[2] 刘占荣[1] 刘树彬[1] 次立杰[1] 武戈[1] 张星辰[1] 

机构地区：[1]石家庄学院化工学院,石家庄050035 [2]衡水学院应用化学系,衡水053000

出　　处：《人工晶体学报》2008年第5期1141-1144,共4页Journal of Synthetic Crystals

基　　金：河北省科学技术研究与发展计划项目(No.05212701D)

摘　　要：利用正硅酸乙酯(TEOS)和氧氯化锆(ZrOCl2.8H2O)的水解反应并经高温煅烧后,在BiVO4晶体表面形成SiO2.ZrSiO4膜,以提高BiVO4的耐高温性。采用红外光谱仪、X射线衍射仪、差热分析仪对产品进行了表征,并得出结论:包覆SiO.ZrSiO膜后的BiVO晶体,其耐热温度由680℃提高到1000℃,并对包覆机理进行了探讨。It was researched on SiO2 · ZrSiO4 coated BiVO4 for the hydrolysis reaction of TEOS and ZrOCl2 · 8H2O and calcination at high temperature to improve the high-temperature resistance of bismuth vanadate crystal, FT-IR, XRD and DTA were used to characterize the samples. The conclusion is that the SiO2 · ZrSiO4 coated BiVO4 crystal can improve the heat resisitance temperature from 680 ℃ to 1000 ℃. The coated mechanism is also researched.

关 键 词：钒酸铋 二氧化硅 硅酸锆 包覆 机理 

分 类 号：O78[理学—晶体学]