制备工艺对p型ZnO薄膜微观结构和电学特性的影响  

Influences of Preparation Techniques on the Microstructure and Electric Characteristics of p-ZnO Thin Films

作　　者：丁瑞钦[1] 陈毅湛[1] 朱慧群[1] 黎扬钢[1] 丁晓贵[2] 杨柳[3] 黄鑫钿[3] 齐德备[4] 谭军[3] 

机构地区：[1]五邑大学薄膜与纳米材料研究所,江门529020 [2]五邑大学数理系,江门529020 [3]五邑大学信息学院,江门529020 [4]五邑大学机电系,江门529020

出　　处：《人工晶体学报》2008年第5期1237-1241,1272,共6页Journal of Synthetic Crystals

基　　金：广东省自然科学基金(No.04011770);江门市科技计划(江财企【2004】59号)

摘　　要：本文报道溅射工艺、退火工艺和冷却方式对磷扩散法制备的p型ZnO薄膜的微观结构和电学特性的影响的实验研究。研究结果表明,ZnO薄膜的表面形貌、结晶度、内应力以及电学特性均与制备工艺条件有密切的关系。文章对这些关系的机理做了探讨和分析。Techniques including magnetron sputtering, annealing, and cooling for preparing p-ZnO thin films by phosphorus diffusion and their influence on the microstructure and electric characteristics of the films have been studied in this article. Results of the research reveal that the morphology, crystallinity and electric characteristics of the p-ZnO films have close relations to the preparation techniques of the films. Mechanisms of the relations have been discussed and analyzed.

关 键 词：ZNO薄膜 工艺条件 微观结构 电学特性 

分 类 号：O484[理学—固体物理]