Ar气压强对直流脉冲磁控溅射制备Mo薄膜性能的影响  

Effects of Argon Pressure on Properties of Mo Films Prepared by Direct Current Pulse Magnetron Sputtering

作　　者：朱继国[1] 丁万昱[1] 王华林[1] 张树旺[1] 张粲[1] 张俊计[1] 柴卫平[1] 

机构地区：[1]大连交通大学材料科学与工程学院光电材料与器件研究所,辽宁大连116028

出　　处：《微细加工技术》2008年第4期35-38,共4页Microfabrication Technology

基　　金：大连交通大学人才引进启动基金资助项目(021403)

摘　　要：利用直流脉冲磁控溅射方法在玻璃衬底上制备太阳电池背接触Mo薄膜。通过台阶仪、四探针电阻仪、X射线衍射仪、紫外-可见分光光度计等研究了Ar气压强对薄膜结构及光电性能的影响,结果表明,在低的Ar气压强下制备的Mo薄膜晶粒尺寸较大,薄膜结晶质量好,薄膜具有优良的光电性能,Ar气压强的增加将导致薄膜的晶粒尺寸减小,薄膜结晶质量差,结构疏松,从而降低薄膜的光电性能。Ar气压强为0.4 Pa时制备薄膜的晶粒尺寸为21.02 nm,电阻率最低,为14μΩ.cm,波长190 nm^850 nm范围内的平均反射率可达到66.94%。Mo films were prepared on the Soda-lime glass （SLG） substrates by direct current pulse magnetron sputtering （DC-PMS）. The effects of argon pressure on the microstructure, optical and electrical properties of Mo films have been characterized by Stylus Profiler, X-Ray Diffraction, Four-probe Resistivity Meter and UV-VIS Spectrophotometer respectively. The results show that films sputtered at low argon pressure had greater grain size, good crystallization and optical and electrical properties. The film deposited at 0.4 Pa with grain size of 21.02 nm and had lowest resistivity of 14μΩ·cm, the mean reflectance of the film reaches 66.94% in the range of 190- 850 nm of wavelength. Films sputtered at high argon pressure had smaller grain size, bad crystallization and optical and electrical properties.

关 键 词：MO薄膜 直流脉冲磁控溅射 晶粒尺寸 光电性能 

分 类 号：TN304.055[电子电信—物理电子学]