具有纳米级结构出光面的AlGaInP基发光二极管  

Nano-structured surface fabrication for AlGaInP light emitting diodes

作　　者：徐丽华[1] 邹德恕[1] 邢艳辉[1] 宋欣原[1] 徐晨[1] 沈光地[1] 

机构地区：[1]北京工业大学,北京市光电子技术实验室,北京100022

出　　处：《光电子．激光》2008年第10期1301-1303,共3页Journal of Optoelectronics·Laser

基　　金：国家“973”计划资助项目(2006CB604902);国家“863”计划资助项目(2006AA03A121);北京市人才强教计划资助项目(05002015200504)

摘　　要：研究了一种利用金属自组装纳米掩膜和ICP刻蚀对AlGaInP基发光二极管(LED)表面进行粗化的技术,使光输出得到了提高。粗化了的AlGaInP基LED比常规的AlGaInP基LED,光强提高了27%,光功率提高了12.6%,实验结果具有可重复性。可以进一步优化Au颗粒的周期和分散程度,提高AlGaInP基LED的提取效率。The self-assembled nanostructure metal is proposed as the masks, then the surface of AlGaInP light emitting diodes （LED） is dry-etched to be roughened. The roughened surfaces-increase the light-output. The light intensity and light power of roughened AlGaInP LEDs increase by 27 % and 12.6 % respectively compared with normal AlGaInP LEDs. By optimizing the period and separation of metal masks,the light-output will be further increased.

关 键 词：表面粗化 金属纳米掩膜 干法刻蚀 

分 类 号：TN312.8[电子电信—物理电子学]