浸没式阵列激光扫描直写光刻  

Laser Array Direct Scanning Photolithography with Immersion Lens

作　　者：徐端颐[1] 范晓冬[1] 蒋培军[1] 齐国生[1] 

机构地区：[1]清华大学精密仪器系,北京100084

出　　处：《电子工业专用设备》2008年第10期1-9,共9页Equipment for Electronic Products Manufacturing

摘　　要：介绍一种以显微镜结构为基础的浸没式阵列激光扫描直写光刻系统的光路结构、有效焦深、自动调焦及曝光能量控制的原理和方法。实验系统的有效数值孔径(ENA)为1.83,使用的激光波长为355nm时,在实验室条件下得到的最细线条宽度为65nm。The principles and methods of the optical system, efficiency focus depth, auto focusing, exposure energy con（rol of a laser array direct scanning microlithography system with immersion lens are described in this paper. The efficiency numerical aperture is 1.83. The minimal line width is 65nm with 355nm laser beam scanning photolithography in laboratory.

关 键 词：阵列激光扫描 浸没式镜头 直写光刻 

分 类 号：TN247[电子电信—物理电子学] TN305.7