NEA GaN光电阴极光电发射机理研究  

Study of Photoemission Mechanism for NEA GaN Photocathode

作　　者：乔建良[1,2] 黄大勇[1] 牛军[1,2] 常本康[2] 

机构地区：[1]南阳理工学院电子与电气工程系,河南南阳473004 [2]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《红外技术》2008年第10期611-614,共4页Infrared Technology

基　　金：教育部高等学校博士点基金资助课题(20050288010)

摘　　要：围绕GaN光电阴极NEA特性的成因,结合激活过程中光电流变化规律和成功激活后阴极表面模型,研究了NEA GaN光电阴极光电发射机理。实验表明:NEA GaN激活过程中光电流在约1 min之内就可达到峰值,Cs/O激活时引入O后光电流的增长幅度不大。根据Spicer光电发射理论,给出了反射模式NEA GaN光电阴极量子产额理论公式,激活成功后GaN光电阴极NEA特性的成因可以用双偶极层模型[GaN(Mg):Cs]:Cs-O解释。Encircling the formation cause of NEA property for GaN photocathode, according to the change law of photocurrent during activation period and the surface model of the photocathode activated successfully, the photoemission mechanism for NEA GaN photocathode is studied. The experiment results show the photocurrent for NEA GaN photocathode in activation process can reach the peak value within about 1 minute. The increasing degree of the photocurrent is small after introducing O during Cs/O activation process for GaN photocathode. According to the Spicer photoemission theory, the quantum yield formula for reflection mode NEA GaN photocathode was given. The formation reasons of GaN photocathode NEA property after activated successfully can be explained using the double dipole layer model [GaN（Mg）：Cs]： Cs-O.

关 键 词：NEA GAN 激活 量子产额 双偶极层模型 

分 类 号：TN219[电子电信—物理电子学]