功率VDMOSFET单粒子效应研究  

Study of Single Event Effect of Power VDMOSFET

作　　者：段雪[1] 郎秀兰[1] 刘英坤[1] 董四华[1] 崔占东[1] 刘忠山[1] 孙艳玲[1] 胡顺欣[1] 冯彬[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第10期573-576,共4页Micronanoelectronic Technology

摘　　要：阐述了空间辐射环境下n沟功率VDMOSFET发生单粒子栅穿(SEGR)和单粒子烧毁(SEB)的物理机理。研究了多层缓冲局部屏蔽抗单粒子辐射的功率VDMOSFET新结构及相应硅栅制作新工艺。通过对所研制的漏源击穿电压分别为65V和112V两种n沟功率VDMOS-FET器件样品进行锎源252Cf单粒子模拟辐射实验,研究了新技术VDMOSFET的单粒子辐射敏感性。实验结果表明,两种器件样品在锎源单粒子模拟辐射实验中的漏源安全电压分别达到61V和110V,验证了新结构和新工艺在提高功率VDMOSFET抗单粒子效应方面的有效性。Mechanisms for single event gate-rupture （SEGR） and single event burnout （SEB） in n-channel power VDMOSFETs operating in space radiation environment were analyzed. A novel device structure of local shielding buffer layers and the corresponding polysilicon gate process were explored. In order to determine the single event effect （SEE） sensitivity in power VDMOSFETs manufactured by the new technology, radiation experiments were carried out by exposing device samples of which BVDSS values were 65 V and 112 V to heavy ions from ^252Cf source, respectively. The experiment result indicates that the safe source-drain voltages of the two sorts of samples in ^252Cf can reach 61 V and 110 V, respectively. Validities of the new structure and the new process for power VDMOSFETs in improving single event radiation-harden were demonstrated.

关 键 词：功率纵向双扩散金属氧化物半导体场效应晶体管 单粒子栅穿 单粒子烧毁 缓冲屏蔽 锎源 

分 类 号：TN386.1[电子电信—物理电子学] TN306