两步热处理法对WO_3薄膜结构及其气敏性能的影响  

Effect of two-step annealing method on structure and gas sensing performance of nanotungsten oxide thin films

作　　者：李东海[1] 胡明[1] 尹英哲[1] 冯有才[1] 陈鹏[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《功能材料》2008年第10期1659-1661,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60371030;60771019)

摘　　要：利用对靶磁控溅射的方法,在Al2O3基片上面生长WO3薄膜,并在200、300、400、600℃的空气环境中对薄膜进行了热处理,利用AFM、SEM及XRD方法观察了薄膜的表面形貌特征,分析了薄膜的性质和微观结构。根据SEM图观察可知,薄膜在退火温度为300℃时具有均匀的纳米颗粒,当再次退火温度>600℃时,观察薄膜表面形貌和颗粒结构没有任何改变,实验结果表明,当工作温度为250℃时,经过两步热处理方法制备的WO3薄膜对浓度为3×10-5的乙醇气体显示了优异的性能,通过两步热处理的方法能制备出稳定的WO3纳米薄膜结构。WO3 nano-particles thin film gas sensors have been prepared on Al2O3 substrate by dc reactive magnetron sputtering and have been annealed in air at temperatures of 200,300,400,600℃. Surface morphology and microstructure of the films were analyzed with AFM,SEM and XRD. According to SEM figure,it is found that the film annealed at 300℃ has a uniform nanocrystalline structure. When these nanocrystalline were re-annealed in higher temperature（〉 600℃）. No any variation of surface morphology and crystalline structure was observed. The experimental results indicated that WO3 films prepared by two-step annealing method have shown an excellent performance towards 3.0× 10^-5 ethanol gas in the working temperature of 250℃ and stable nanocrystalline WO3 films could be prepared by two-step annealing.

关 键 词：纳米颗粒 三氧化钨 薄膜 热处理 

分 类 号：TN304.05[电子电信—物理电子学]