Si_3N_4/SiO_2叠层栅MOS电容抗辐照总剂量研究  

Study of Total Ionizing Dose Radiation Effects on nitride/oxide stack gate MOS Capacitor

作　　者：蔡小五[1] 海潮和[1] 陆江[1] 王立新[1] 刘刚[1] 刘梦新[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《核电子学与探测技术》2008年第4期754-756,777,共4页Nuclear Electronics & Detection Technology

摘　　要：本论文主要分析了Si3N4/SiO2叠层栅MOS电容总剂量效应,叠层栅MOS电容中SiO2为20nm,Si3N4厚度分别为40nm和110nm,通过辐照前后电容CV曲线的对比分析,发现CV曲线的正方向漂移主要是由于界面态电荷的作用,同时氧化物俘获电荷也起到一定的作用。同时也发现叠层栅中Si3N4越厚,将产生越多的界面态电荷和氧化物俘获电荷。The aim of this paper is to investigate the total ionizing dose （TID） radiation effects on MOS capacitor with nitride/oxide stack gate. The stack gate MOS capacitors are fabricated with 20nm oxide, 40nm nitride or 110nm nitride respectively. Through the analysis of CV curve of the irradiation capacitors, it is found that the degradation of the CV curve is due to a significant increase of interface traps and somewhat smaller oxide charge. It is also shown that the thicker of the nitride, more interface traps and oxide charge will be occurred.

关 键 词：叠层栅 界面态电荷 氧化物俘获电荷 电容 

分 类 号：TN386[电子电信—物理电子学]