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出 处:《稀有金属材料与工程》2008年第10期1693-1695,共3页Rare Metal Materials and Engineering
摘 要:应用Cheng-Born能带对称破缺理论和TFDC(Thomas-Fermi-Dirac-Cheng)电子理论研究了薄膜层内电子的特性。对金属铂上的TiO2膜层来说,TFDC理论指出电子(或空穴)将由金属与膜的间界面一侧迁移到另一侧。根据Cheng-Born对称破缺理论,当能带中只有很少的电子时,则只有极少的角区中存在电子,动量空间即产生对称破缺,从而导致超导电性,并由热力学估算出薄膜超导体的转变温度。结果显示薄膜超导体的转变温度至少比块材超导体的转变温度高一个量级。作者还设计了一个研究薄膜超导电性的实验。Behavior of electrons inside a thin coating layer is studied. It is based on Cheng-Born theory of broken symmetry and TFDC(Thomas-Fermi-Dirac-Cheng) electron theory. For a specimen (TiO2, say) coated on a conducting metal plate (e.g. platinum), according to the TFDC model, a small group of electrons (or holes) will transfer from one side of boundary to the other. Based on Cheng-Born theory, in case where only few electrons exist in zone, only a few corners are occupied, broken symmetry in momentum space will occur and lead to advent of superconductivity. Following the general formulation of thermodynamics, an estimate on the transition temperature in two-dimensional space is made. The result shows that the superconductors in two-dimensions are in general inherent to HTS, Tc of superconductor in two-dimensions would be at least by one order larger than Tc of normal superconductor in three-dimensions. In this text an experiment is designed to look for superconductivity of thin film.
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