用自制总积分散射仪评估SiC基底表面改性效果  

Evaluation of performance of surface modification for silicon carbide mirror by self-made TIS scatterometer

作　　者：申振峰[1,2] 高劲松[1] 陈红[1,2] 王笑夷[1] 王彤彤[1,2] 郑宣鸣[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院研究生院,北京100049

出　　处：《光学精密工程》2008年第10期1841-1846,共6页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.60478035)

摘　　要：根据总积分散射理论自制了半球式总积分散射仪,建立了系统规范的测试方法,并应用其对工程中SiC基底表面改性的效果进行了相关检测和评估。改性后RB-SiC和S-SiC基底的散射系数分别降低到2.86%和1.53%,已接近于抛光良好的微晶玻璃的水平(1.38%)。该散射仪的优点是操作简单、方便快捷、不接触样品、对表面无损害。通过对测试数据的分析可知,从散射特性角度对SiC基底表面改性效果进行评估是合理有效的。把相关测试结果与分光光度计的测试结果对比,测量偏差在1.1%左右,说明该总积分散射仪的测试结果准确可靠。A Total Integrated Scatterometer （TIS） was manufactured based on the TIS theory for evaluation of the surface modification of SiC mirror. The normative testing methods were established and then the TIS was used to evaluate the performance of the surface modification of SiC mirror. Evaluated results show that the scattering coefficients of RB-SiC and S-SiC are reduced to 2. 86% and 1.53 %, which are close to that of zerodur （1.38 %）. The scatterometer has advantages of convenience and rapid operation and no touch to the sample surface in the testing process. Analysis of the testing data shows that it is reasonable and effective to evaluate the performance of the surface modification by scattering characteristics. By comparing the testing results to those of Lambda 900 spectrometer, the difference is only about 1.1%, which means the testing results of TIS are exact and reliable.

关 键 词：总积分散射仪 SiC反射镜 表面改性 

分 类 号：O484.4[理学—固体物理] TN307[理学—物理]