基于吸收系数修正的硅片激光弯曲模拟与实验  

Modification of silicon absorbing coefficient in laser bending experiment

作　　者：王续跃[1] 胡亚峰[1] 许卫星[1] 吴东江[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116024

出　　处：《光学精密工程》2008年第10期1928-1935,共8页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.52090101);国家863高技术计划研究发展计划资助项目(No.2002AA421230);辽宁省自然科学基金资助项目(No.20062181)

摘　　要：考虑热吸收系数随温度变化的因素,以硅为对象进行了激光弯曲模拟和实验。借助APDL语言编写了激光弯曲成形的仿真程序,对单脉冲作用过程进行模拟,以得到单点脉冲周期内的温度分布;采用NiCr/NiSi合金薄膜热电偶对单脉冲作用过程中的温度分布进行测量,对比上述的温度模拟与测量结果,修正硅材料的激光综合吸收系数为0.82。采用有限元分析软件实现了硅片的脉冲激光弯曲成形的仿真和模拟,并对硅片多次连续扫描的弯曲模拟与弯曲实验进行对比,误差仅为0.1°,验证了仿真程序的有效性,为硅片的激光弯曲成形提供了理论与实验依据。By considering thermal absorption factors changed with temperature, the laser bending experiments and simulations were conducted using a silicon material. The laser bending simulation program was written by APDL to simulate the single point pulse action process to obtain the temperature variation on action point in cycle time. An NiCr/NiSi alloy thin film thermocouple was applied to measure temperature distribution of single-pulse action process. By comparing the temperature field simulation results with thermocouple measurement results, the absorption factor of silicon was modified to 0.82. Finite element analysis was used in the simulation of pulse laser bending of silicon,resuits show that the error between the result of bending simulation and that of experiment is only 0.1°, which indicates that the simulation program is effective and provides theoretical and experimental foundations for laser bending of silicon.

关 键 词：激光弯曲 吸收系数 脉冲激光 硅片 

分 类 号：TN249[电子电信—物理电子学] TN305