AlInGaN/GaN PIN紫外光电探测器的研制  

Development on AlInGaN/GaN PIN Ultraviolet Photodetectors

作　　者：黄瑾[1] 洪灵愿[1] 刘宝林[1] 张保平[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《半导体光电》2008年第5期669-672,708,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60276029);国家'863'计划项目(2004AA311020;2006AA032409);福建省科技项目和基金项目(2006H0092;A0210006;2005HZ1018)

摘　　要：用AlInGaN四元合金代替AlGaN作为PIN探测器的有源层,研制出AlInGaNPIN紫外探测器。详细介绍了该器件的结构设计和制作工艺,并对器件进行了光电性能测试。测试结果表明,器件的正向开启电压约为1.5 V,反向击穿电压大于40 V;室温-5 V偏压下,暗电流为33 pA,350 nm处峰值响应度为0.163 A/W,量子效率为58%。Using AIlnGaN instead of AlGaN as the source film of a photodetectors, an AllnGaN-based PIN UV photodetector was developed. Its device structure and fabrication processing are introduced in detail. Measurement results show that its turn-on voltage is about 1.5 V , and VBR〉40 V ; under - 5 V bias voltage at room temperature, the dark current is about 33 pA ; the peak responsivity can reach 0. 163 A/ W at 350 nm, and the quantum efficiency is 58%.

关 键 词：AlInGaN/GaN PIN光电探测器 紫外光电探测器 

分 类 号：TN304[电子电信—物理电子学]