脉冲阳极氧化工艺制作GaAs/AlGaAs宽条形半导体激光器  

GaAs/AlGaAs BA semiconductor lasers fabricated with pulsed anodic oxidation process

作　　者：魏星[1,2] 乔忠良[3] 薄报学[3] 陈静[1] 张苗[1] 王曦[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院研究生院,北京100039 [3]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《功能材料与器件学报》2008年第5期859-863,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(60476026);(60477010);高功率半导体激光国家重点实验室基金(05ZS3606)

摘　　要：研究了脉冲阳极氧化工艺的特性,并利用脉冲阳极氧化工艺制作出激射波长为776nm的宽条形半导体激光器,器件阈值电流为0.35A,斜率效率为1.12W/A,与常规工艺制作的器件相比阈值电流降低了22%,斜率效率提高了18%。The characteristic of pulsed anodic oxidation process was investigated in this paper. Broad area semiconductor lasers with wavelength of 776nm were fabricated with pulsed anodic oxidation process. The threshold current of the device was 0.35A with the slope efficiency of 1.12W/A, compared to the devices fabricated with conventional fabrication process, the threshold current of the devices reduced by 22% and the slope efficiency increased by 18%.

关 键 词：湿法刻蚀 脉冲阳极氧化 斜率效率 

分 类 号：TB308[一般工业技术—材料科学与工程]