柔性FeCoSiB非晶磁弹性薄膜的应力阻抗效应  

Stress impedance effects of FeCoSiB films deposited on flexible substrates

作　　者：苏鼎[1] 张万里[1] 蒋洪川[1] 汤如俊[1] 彭斌[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《功能材料与器件学报》2008年第5期907-910,共4页Journal of Functional Materials and Devices

基　　金：自然科学基金(编号:50501004);国防预研基金(编号:9140A23060307DZ0223)项目资助

摘　　要：采用直流磁控溅射方法在柔性Kapton基片上沉积了FeCoSiB薄膜,研究了偏置磁场、溅射气压以及测试频率对薄膜应力阻抗效应的影响规律。结果表明,本文中优化的溅射气压为1.5 Pa,强的偏置磁场可形成强的横向各向异性,从而显著提高材料的应力阻抗效应。随着测试频率从0.1MHz升高到30 MHz,薄膜的应力阻抗效应显著增强。FeCoSiB films were deposited on flexible substrates by magnetron sputtering. The influences of sputtering gas pressure, bias magnetic field and testing frequency to the stress impedance effect of the films were studied. The results show that the optimized sputtering pressure is 1.5 Pa and stronger bias magnetic field can induce stronger uniaxial transversal magnetic anisotropy, thus the stress impedance effect of the films is increased obviously. When the testing frequency increases from 0.1 MHz to 30 MHz, the stress impedance effect of the films increases.

关 键 词：柔性基底 FeCoSiB非晶磁弹性薄膜 应力阻抗效应 

分 类 号：TN304.21[电子电信—物理电子学] TM93[电气工程—电力电子与电力传动]