射频磁控溅射法LiNbO_3薄膜的制备及其影响因素研究  

Fabrication and influence of LiNbO_3 films deposited by radiofrequency-sputtering technique

作　　者：孙大智[1] 熊瑛[1] 杨晓萍[1] 

机构地区：[1]天津理工大学电子信息与通信工程学院,天津300191

出　　处：《天津理工大学学报》2008年第4期39-41,共3页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金(023601711)

摘　　要：采用射频磁控溅射法在Si(111)和Si(100)上制备LiNbO3薄膜.通过XRD技术探讨了硅基片取向和所制备的薄膜的取向之间的联系,研究了不同靶材对薄膜的影响,讨论了热处理温度、工艺和所制备的薄膜取向的关系.报道了在Si(111)基片上制备高c轴取向的LiNbO压电薄膜的制备方法.The radiofrequency sputtering technique has been used to deposit LiNbO3 thin films onto Si （ 111 ） and Si （100）. The relationship between orientation of substrate and film has been discussed. By XRD technique the influence of different targets to the concentration of the films is studied. The temperature and process of post-annealing treatments with films are discussed. The method of depositing high c-axle LiNbO3 films on Si （ 111 ） is reported.

关 键 词：LiNbO3薄膜 射频磁控溅射 薄膜取向 

分 类 号：TN304.055[电子电信—物理电子学]