氧分压对氧化镍薄膜表面形貌和光电性能的影响  

Influence of oxygen partial pressure on the surface morphology,electrical and optical properties of NiO_x films

作　　者：刘化然[1] 盛英卓[1] 宋宇[1] 杨伟峰[1] 李金荣[1] 黄鹏[1] 冯博学[1] 

机构地区：[1]兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州730000

出　　处：《功能材料》2008年第8期1246-1248,共3页Journal of Functional Materials

基　　金：国家自然科学基金(60576013;60536010)

摘　　要：采用射频溅射法在SnO_2衬底上生长了NiO_x薄膜,制备的薄膜是非理想化学计量的微晶薄膜。研究了氧分压对NiO_x薄膜的溅射速率、表面形貌和光学电学特性的影响。研究结果显示,O_2分压在1:10时,可得到最快的沉积速率;低的氧分压沉积的薄膜表面比较疏松;随着氧含量的增加,方块电阻呈上升趋势,当氧分压达到一定值时,膜电阻又开始下降;随着氧分压的升高,颜色会逐渐加深,透射率降低。The NiOx thin films were deposited on SnO2/glass substrates by RF sputtering, the films are non-stoichoimetric and microcrystal. The deposition rate, surface morphology, electrical and optical properties of NiOx films have been investigated. The results show the highest deposition rate is found when the oxygen partial pressure is at 1 ： 10; the films have loose structure at lower oxygen partial pressure the sheet resistance increases as the oxygen content is more; the sheet resistance decreases at a certain oxygen content; the films become darker and optical transmittance decreases as the oxygen partial pressure increases.

关 键 词：NIOX 射频溅射 电致变色 氧分压 

分 类 号：O484[理学—固体物理]