X波段宽带单片集成低噪声放大器设计  

Design of X-Band Broadband Low Noise Amplifier MMIC

作　　者：张德智[1] 祝家秀[1] 徐今[1] 

机构地区：[1]华东电子工程研究所,合肥230031

出　　处：《微波学报》2008年第5期45-47,52,共4页Journal of Microwaves

摘　　要：采用负反馈三级级联方案，使用UMS公司的0．25umGaAsPHEMT工艺，设计制作了一个X波段宽带单片集成低噪声放大器。测试结果为：＋5V单电源工作，在6～11．5GHz频率范围，增益〉29．5dB，噪声系数〈1．7dB。具有频带宽、低噪声、高增益、单电源应用等显著特点，特别适合大型相控阵雷达T／R组件中使用。The design method of an X band broadband low noise amplifier composed of three stages pHEMT FETs is introduced in this paper. The X Band broadband low noise amplifier with 0.25um GaAs pHEMT technology is realized. The measured results show： single power is ＋5V, frequency range covers 6 - 11. 5GHz, Gain is more than 29.5dB, and noise factor is less than 1.7dB. Having characters of wide bandwidth, low noise-factor, high gain and single ＋ 5V power supply etc, the chip is especially suitable for using in T/R modules of large-scale phased array radar.

关 键 词：微波单片集成电路 宽带放大器 噪声系数 增益平坦度 

分 类 号：TN722.3[电子电信—电路与系统] TN36