台阶型InGaN量子阱蓝光发光二极管设计与数值模拟  

Simulation and Design of Step-like InGaN Quantum Well Structure Blue Light-emitting Diode

作　　者：李为军[1] 张波[1] 徐文兰[2] 陆卫[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理重点实验室,上海200083 [2]华东师范大学信息科学技术学院,上海200062

出　　处：《激光与红外》2008年第11期1114-1117,共4页Laser & Infrared

基　　金：国家自然科学基金(No.10474020);中国科学院知识创新工程青年人才领域前沿项目(No.C2-14)资助

摘　　要：一种特定发光波长（415—425nm）的台阶型InGaN构型量子阱被设计并从理论上进行考察，包括量子阱区域载流子浓度分布、自发辐射复合速率、Shockley-Read-Hall（SRH）辐射复合速率以及输出功率和内量子发光效率的分析。与传统的InGaN构型量子阱结构相比，使用台阶型InGaN构型的量子阱结构，活性区载流子浓度特别是空穴浓度得到明显的改善，输出功率和内量子效率分别提高了52．5％和52．6％。自发发光强度与传统的InGaN构型量子阱发光强度相比也有1．54倍的增强。分析结果暗示SRH非辐射复合速率积分强度的减少被认为是台阶型InGaN构型量子阱光学性能提升的主要原因。The step-like InGaN quantum well （QW） and conventional InGaN QW for emission at a particular wavelength regime 415 -425nm are designed and theoretically investigated,including the distribution of carriers＇ concentration,radiative recombination rate, Shockley-Read-Hall （SRH） recombination rate as well as output performance and internal quantum efficiency. Theoretical research suggests that the step-like QW structure offers significant im- provement of carriers＇ concentration in the QW, especially hole concentration. Output performance and internal quantum well efficiency show 52.5% and 52.6% enhancement for step-like InGaN QW, respectively, in comparison to that of conventional InGaN QW. The improvement in luminescence intensity of step-like InGaN QW was found to be 1.54 times higher than that of the convention one. The reduction in SRH non-radiative recombination rate integral intensity can be the main reason the improvement of optical performance for step-like InGaN QW.

关 键 词：Step-like InGaN量子阱 INGAN 发光二极管 数值模拟 

分 类 号：TN312.8[电子电信—物理电子学]