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作 者:唐利斌[1] 姬荣斌[1] 宋立媛[1] 陈雪梅[1] 李永亮[1] 荣百炼[1] 宋炳文[1]
机构地区:[1]昆明物理研究所,昆明650223
出 处:《物理学报》2008年第11期7244-7251,共8页Acta Physica Sinica
基 金:国家自然科学基金(批准号:60576069);云南省自然科学基金面上项目(批准号:2004E0055M)资助的课题~~
摘 要:对固相合成法制备的有机红外半导体ErPc2进行了碘掺杂,有效地将ErPc2的电阻率降低了约3个数量级.研究了本征和碘掺杂有机红外半导体ErPc2电阻的温度依赖关系,碘的掺杂除显著地降低了ErPc2材料的电阻外,其电阻的温度特性没有本质的变化,本征和碘掺杂ErPc2都表现出指数型的电阻温度依赖关系.碘掺杂有效地降低了载流子的热激活能,使更多的载流子得以参与导电,掺杂后指前因子的减小也为降低材料的电阻率作出了贡献.解释了在高电场强度下本征有机红外半导体ErPc2的指数I-V关系.The organic infrared semiconductor ErPc2 prepared by solid phase reaction method has been doped with iodine, the resistivity of ErPc2 has been successfully decreased by about three orders of magnitude by doping. The R-T relationships for intrinsic and iodine doped ErPc2 have been studied, it is found that compared with intrinsic ErPc2, the doped ErPc2 has a remarkable decrease in resistivity, the relationship between resistance and temperature for the doped ErPc2 has not been changed intrinsically, both intrinsic and doped ErPc2 exhibit an exponential dependence of R-T. It is also found that the heat activation energy ( Ea) has been effectively reduced by doping, which leads to more carriers that may take part in conducting electricity for ErPc2. The decrease in pre-exponential factor (A) may also contribute to reducing resistivity of ErPc2. The exponential relationship between I and V under a strong electrical field strength has also been explained for the intrinsic organic infrared semiconductor ErPc2.
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