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出 处:《Chinese Physics B》2008年第11期4129-4136,共8页中国物理B(英文版)
基 金:Project supported in part by the State Key Program of National Natural Science of China (Grant No 70431002);the National Natural Science Foundation of China (Grant No 10575010);the National Basic Research Program of China (Grant No 2007CB814805);the Foundation of Doctoral Training of China (Grant No 20060027009)
摘 要:We investigate the wavefronts depinning in current biased, infinitely long semiconductor superlattice systems by the method of discrete mapping and show that the wavefront depinning corresponds to the discrete mapping failure. For parameter values near the lower critical current in both discrete drift model (DD model) and discrete drift-diffusion model (DDD model), the mapping failure is determined by the important mapping step from the bottom of branch to branch α. For the upper critical parameters in DDD model, the key mapping step is from branch γ to the top of the corresponding branch α and we may need several active wells to describe the wavefronts.We investigate the wavefronts depinning in current biased, infinitely long semiconductor superlattice systems by the method of discrete mapping and show that the wavefront depinning corresponds to the discrete mapping failure. For parameter values near the lower critical current in both discrete drift model (DD model) and discrete drift-diffusion model (DDD model), the mapping failure is determined by the important mapping step from the bottom of branch to branch α. For the upper critical parameters in DDD model, the key mapping step is from branch γ to the top of the corresponding branch α and we may need several active wells to describe the wavefronts.
关 键 词:semiconductor superlattice wavefront depinning sequential tunnelling
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