Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition  

作　　者：梁松 朱洪亮 潘教青 赵玲娟 王鲁峰 周帆 舒惠云 边静 安欣 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2008年第11期4300-4304,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos 60706009, 90401025, 60736036, 60777021 and60476009);the National Key Basic Research Program of China (Grant Nos 2006CB604901 and 2006CB604902);the National High Technology Research and Development Program of China (Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417)

摘　　要：Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

关 键 词：metal-organic chemical vapour deposition InAs/GaAs quantum dots laser 

分 类 号：O472.3[理学—半导体物理]