移动Ni-5W基带上制备钇系涂层导体隔离层的研究  

Deposition of Y2O3 Buffer Layer for Coated Conductors on Moving Ni-5W Substrate

作　　者：刘慧舟[1] 杨坚[1] 张华[1] 古宏伟[1] 

机构地区：[1]北京有色金属研究总院超导材料研究中心,北京100088

出　　处：《稀有金属》2008年第5期627-630,共4页Chinese Journal of Rare Metals

基　　金：国家高技术研究发展计划(863计划)(2006AA03Z205)项目资助

摘　　要：采用电子束蒸发和磁控溅射两种工艺在移动的Ni-5W合金基带上制备了Y2O3隔离层,研究了镀膜过程中基带移动速度对隔离层性能的影响,同时详细比较了两种镀膜方法。利用扫描电镜、X射线衍射等手段对Y2O3隔离层进行了分析。结果表明:通过严格控制工艺条件,两种方法都能在移动Ni-5W合金基带上制备高立方织构、表面致密光滑的Y2O3隔离层。研究发现,电子束蒸发工艺中,理想的基带移动速度是0.4～1.0mm·s-1;磁控溅射工艺中,适宜的基带移动速度应该是0.5～2.0mm·s-1。Y2O3 buffer layer on moving substrates of rolled Ni-SW was prepared using continuous electron beam evaporation and magnetron sputtering techniques. The effect of moving speed of the substrate on the properties of the Y2O3 buffer layer was studied and the two techniques to prepare the buffer layer were compared also in detail. The buffer layer was characterized by means of scanning electron microscope （SEM） and X-ray diffraction （XRD） method. The results indicated that a dense Y2O3 buffer layer with more cubic texture structure and smooth surface could be obtained using both of continuous electron beam evaporation and magnetron sputtering techniques. It was found that in the study that a suitable moving speed of the substrate was 0. 4 - 1.0 mm·s^-1 for the process of continuous electron beam evaporation and for the process of magnetron sputtering should be 0. 5 2.0 mm·s^-1.

关 键 词：涂层导体 连续沉积(隔离层) Y2O3 电子束蒸发 溅射 

分 类 号：TM26[一般工业技术—材料科学与工程]