IGBT技术发展综述  

Review on Development of IGBT Technology

作　　者：叶立剑[1] 邹勉[1] 杨小慧[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《半导体技术》2008年第11期937-940,951,共5页Semiconductor Technology

摘　　要：绝缘栅双极晶体管(IGBT)自问世以来,在结构设计、加工工艺和应用开发等方面得到了很大的发展。概述了IGBT的一般结构和发展历史,着重介绍了近年来几个专利技术中IGBT结构设计和制造方面的新进展。特别是宽禁带半导体材料SiC的异军突起,为IGBT技术开辟了一个新的发展空间。Since insulated gate bipolar transistor （IGBT） appeared, its structure design, processing and application are developed greatly. The general structure and developed history of IGBT are briefly described and new progress for its structure design and manufacture related to several patent technologies in recent years are introduced. Specially, a new developing domain is opened up for IGBT technology because the wide-bandgap semiconductor SiC is coming to the fore.

关 键 词：绝缘栅双极晶体管 专利 碳化硅 掺砷 

分 类 号：TN389[电子电信—物理电子学]