基于原位水汽生成的超薄栅氧膜电学特性研究(英文)  

Electrical Characterization of Ultra-Thin Gate Dielectrics Generated by ISSG Process

作　　者：孙凌[1,2,3] 高超[1,2,3] 王磊[1,2,3] 杨华岳 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]上海宏力半导体制造有限公司,上海201203 [3]中国科学院研究生院,北京100039

出　　处：《半导体技术》2008年第11期995-999,共5页Semiconductor Technology

摘　　要：介绍了针对利用原位水汽生成工艺制作的超薄栅介质膜的电学特性研究。通过电荷泵和栅极隧穿漏电流的测试,证明了原位水汽生成工艺相比传统炉管氧化工艺能够有效地提高界面态特性,这种电学特性上的提高被认为与活性氧原子的氧化机制有关。同时,通过测试还发现提高生长温度和减小H2在反应气体中的比重可以获得更好的电特性,这也指明了原位水汽生长工艺存在进一步提高的可能。The electrical characteristics steam generation） process were investigated. leakage of MOSFETs with gate dielectrics fabricated by ISSG （in-situ The measurement results of charge pumping and gate tunneling current in depletion region have demonstrated an improvement on interface-state property for ISSG in comparison with conventional furnace oxidation technique. This improvement on electrical property is considered to arise from the atomic Oxygen （0^＊） oxidation mechanism of ISSG. It is also found that increasing process temperature and decreasing H2 fraction in mixed reaction gas could lead to better electrical performance indicating a broader exploring space for ISSG process.

关 键 词：原位水汽生成 界面态 迁移率 栅氧化膜 

分 类 号：TN305.5[电子电信—物理电子学]