反应气体H_2O对Y_2O_3隔离层外延生长的影响  

INFLUENCE OF WATER VAPOR ON EPITAXIAL GROWTH OF Y_2O_3 BUFFER LAYER

作　　者：张华[1] 金薇[1] 刘慧舟[1] 杨坚[1] 

机构地区：[1]北京有色金属研究总院超导材料研究中心,北京100088

出　　处：《低温物理学报》2008年第4期318-321,共4页Low Temperature Physical Letters

基　　金：国家973计划(项目编号:2006CB601005);863计划(项目编号:2006AA03Z205)资助的课题~~

摘　　要：报道了用反应溅射的方法在有强立方织构的NiW基带上连续制备Y2O3隔离层的研究结果.用X射线θ～2θ扫描,φ扫描对薄膜的取向和织构进行表征,用扫描电子显微镜(SEM)和原子力显微镜(AFM)对薄膜的表面形貌进行观察.论文主要研究了H2O分压对Y2O3隔离层外延生长以及表面形貌的影响,结果表明:H2O分压过小,Y2O3织构相对衬底有所弱化,薄膜表面不透明,原子覆盖不均匀,且不利于后续隔离层YSZ的生长.同时,临界H2O分压与温度和总气压的关系也作了详细研究.Chinalt was reported the results for development of Y/O3 buffer layers on the cube textured NiW substrates using continuous reactive magnetron sputtering technique. X-ray diffraction of θ- 2θ scan, φ-scan were employed to characterize the in-plane alignment and cube texture. The surface morphology of buffer layers was evaluated in SEM and AFM. More attention had been pained to the influence of H2O partial pressure on the texture and surface morphology of Y2O3 buffer layer. The results indicate that when the partial pressure of water vapor is lower than a critical value, the Y2O3 is inferior. It can be easily found that the color of the Y2O3 film is not transparent, the texture and the surface morphology get worse. In addition, the critical partial pressure of water vapor depending on the substrate temperature and total pressure had also been investigated in detail.

关 键 词：反应溅射 Y2O3隔离层 H2O分压 表面形貌 

分 类 号：O484.1[理学—固体物理]