MEVVA离子注入技术制备DLC:Ni多层厚膜  

Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation

作　　者：覃礼钊[1,2] 吴正龙[3] 张旭[1] 刘安东[1] 廖斌[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]遵义师范学院物理系,遵义563000 [3]北京师范大学分析测试中心,北京100875

出　　处：《核技术》2008年第11期806-810,共5页Nuclear Techniques

基　　金：遵义市科技局;遵义师范学院科技研发基金(0009)资助

摘　　要：采用金属蒸汽真空弧(Metal Vapor Vacuum Arc,MEVVA)离子源注入技术,将Ni离子注入到类金刚石(Diamond-like Carbon,DLC)膜中,并重复沉积和注入过程,制备出2个层数分别为10层和15层、厚度达1.0μm和1.5μm、注入剂量不同的DLC:Ni膜样品。性能测试结果显示,膜内应力得到有效释放,膜基结合紧密,仍保持较高sp3含量以及较高硬度和弹性模量,是一种制备DLC厚膜的有效方法。High internal residual stress in diamond-like carbon （DLC） films is a major factor that hinders thick film fabrication. In order to solve this problem, metal vapor vacuum arc （MEVVA） tectmique was used. DLC film was deposited by filtered cathodic arc deposition, and Ni ions were implanted into the film. By repeating the deposition and implantation, DLC：Ni films of 10 and 15 layers and in thickness of about 1.0 μm and 1.5μm, respectively, were fabricated. A series of structure and property tests were carried out. The results show that the internal residual stress is released effectively, with increased adhering between the film and substrate. The sp3 contents, the hardness and the elastic modulus of the films are high. These indicate that this method is a feasible technique to fabricate thick DLC films.

关 键 词：MEVVA源 类金刚石膜 多层膜 厚膜 

分 类 号：TB43[一般工业技术]