添加剂对SnO2纳米薄膜微结构与光致发光性质影响的研究  

Effect of Additives on Microstructure and Photoluminescence Properties of SnO_2 Nanometer Thin Film

作　　者：秦苏梅[1] 邓红梅[2] 童梓洋[1] 杨平雄[1] 

机构地区：[1]华东师范大学信息学院,上海200241 [2]上海大学分析测试中心,上海200444

出　　处：《分析测试学报》2008年第11期1194-1197,共4页Journal of Instrumental Analysis

基　　金：国家自然科学基金资助项目(60677022);国家重大科学研究计划项目(2007CB924902);上海市教委科研基金资助项目(2006AZ113);上海市教委优秀青年教师科研专项基金资助项目;上海市科委重点项目(07JC1408)

摘　　要：以SnCl2.2H2O及无水乙醇为原料,利用溶胶-凝胶法(sol-gel)制备了SnO2纳米薄膜。在溶胶中添加了多种添加剂,用X射线衍射仪(XRD)、扫描电镜(SEM)和光致发光谱仪(PL)研究了添加剂对薄膜结构、形貌和光学性质的影响,结果表明氨水的加入能抑制晶粒快速长大,未加入氨水的SnO2薄膜在750℃和900℃热处理后平均晶粒尺寸分别为23.1 nm和50.5 nm,而加入氨水后的平均晶粒尺寸分别为19.6 nm和42.8 nm;丙三醇(GCR)的添加能抑制团聚和防止深裂痕,使薄膜光滑、平整;表面活性剂聚乙二醇2000、聚乙二醇4000能使薄膜产生空隙和大量孔洞,从而大大增加薄膜比表面积,使之气敏性能显著提高,同时还发现,相同量的聚乙二醇2000和聚乙二醇4000,后者产生的孔洞比前者密;对光致发光性质进行了研究,结果表明聚乙二醇2000的加入使发光强度增大。Fine SnO2 nanometer thin film on silicon was prepared by the technique of sol - gel process, in which SnCl2 · 2H2O and anhydrous ethanol were used as the source material. In order to improve the quality of SnO2 thin film, different additives were added in the precursor solution. The effects of additives on the morphology, the microstructure and the optical property of SnO2 nanometer thin films were characterized by using scanning electron microscope （SEM）, X-ray diffraction （XRD） and photoluminescence （PL） spectroscopic technique. The result indicated the adding of ammonia could control the size of grains, and the average grain sizes of the film annealed at 750 ℃ and 900℃ were 23.1 nm and 50.5 nm, while 19.6 nm and 42. 8 nm with ammonia, respectively. Added of glycerol（GCR） could improved obviously the quality of the thin film, and made it has a more smooth and homogeneous surface without deep fissure. The adding of polyethylene glycol 2000 and 4000 both produced a great deal of pores on the film, which could enhance the specific surface area of thin film sensor. The PL spectra of the film also indicated that the adding of polyethylene glycol 2000 could increase the PL intensity of the film.

关 键 词：溶胶-凝胶法 SNO2薄膜 添加剂 微结构 光致发光 

分 类 号：TB43[一般工业技术] O482.31[理学—固体物理]