外延衬底用CdZnTe晶体进展  

The Growth Research (Summary) of CdZnTe Crystal for the Epitaxy Substrate of HgCdTe

作　　者：刘克岳[1] 王金义[1] 郎维和[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》1997年第4期215-218,共4页Laser & Infrared

摘　　要：文中简要介绍了CdZnTe晶体用作HgCdTe外延衬底的优点和国内外研究的现状，概括了CdZnTe晶体的生长方法及其特点，总结了影响CdZnTe晶体生长和晶体质量的因素，提出CdZnTe晶体生长中存在的问题和改善晶体质量的措施。?in the paper, a brief introducton about the advantage of CdZnTe crystal as HgCdTe epitaxy substrate, the current situation of externl and internal research are presented. Summarized the growth method and its characteristic. Analysed in detail the influence factors on crystal growth and quality,putforward some problems exist in crystal growth and some measures for improving the quality of crystal.

关 键 词：外延衬底 晶体生长 CZT晶体 碲锌镉 

分 类 号：TN213[电子电信—物理电子学] O782.9[理学—晶体学]