单晶铜中纳米空洞的特性研究  

The Investigation of Nano-void Inclusion in Single Crystal Copper

作　　者：杨其利[1] 

机构地区：[1]枣庄学院物理与电子工程系,山东枣庄277160

出　　处：《枣庄学院学报》2008年第5期45-47,共3页Journal of Zaozhuang University

摘　　要：利用分子动力学方法研究了单晶铜中球形空洞在冲击波下的演化过程.模拟结果表明在冲击波作用下,空洞周围原子发生滑移,已滑移和未滑移的边界形成位错环.不同位错环处的生长速度不同.The evolution of preexisting nano - voids in single crystal copper is investigated by means of molecular dynamics （MD） simulations. The simulations show that the atoms would slip and dislocation loops emerge in the border between atoms which have slipped and atoms which havent at the shock wave. The atoms in loops move at different speed.

关 键 词：纳米空洞 位错环 冲击波 

分 类 号：O474[理学—半导体物理]