A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs  

非掺杂对称双栅的基于完整表面电势的核心模型(英文)

作　　者：何进[1,2] 张立宁[2] 张健[2] 傅越[2] 郑睿[2] 张兴[1,2] 

机构地区：[1]北京大学深圳研究生院集成微系统重点试验室,深圳518055 [2]北京大学信息科学技术学院,北京100871

出　　处：《Journal of Semiconductors》2008年第11期2092-2097,共6页半导体学报（英文版）

基　　金：the National Natural Science Foundation of China(No.90607017);the Competitive Ear marked Grant 611207 from the Research Grant Council of Hong Kong SAR;the International Joint Research Program(NEDO Grant)from Japan(No.NEDOO5/06.EG01)~~

摘　　要：A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson＇s equation to obtain the relationship between the surface potential and voltage in the channel region in a self-consistent way. The drain current expression is then obtained from Pao-Sah＇s double integral. The model consists of one set of surface potential equations,and the analytic drain current can be evaluated from the surface potential at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the double-gate MOSFETs and without any need for simplification （e. g., by using the charge sheet assumption） or auxiliary fitting functions. The model has been verified by extensive comparisons with 2D numerical simulation under different operation conditions with different geometries. The consistency between the model calculation and numerical simulation demonstrates the accuracy of the model.通过求解Poisson方程自洽地得到了表面电势随沟道电压的变化关系,从而推出了非掺杂对称双栅MOSFET的一个基于表面势的模型.通过Pao-Sah积分得到了漏电流的表达式.该模型由一组表面势方程组成,解析形式的漏电流可以通过源端和漏端的电势得到.结果标明该模型在双栅MOSFET的所有工作区域都成立,而且不需要任何简化(如应用薄层电荷近似)和辅助拟合函数.对不同工作条件和不同尺寸器件的二维数值模拟与模型的比较进一步验证了提出模型的精度.

关 键 词：bulk MOSFET limit non-classical CMOS double-gate MOSFET device physics surface potential-based model 

分 类 号：TN386.1[电子电信—物理电子学]