An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band  

InGaP/GaAs HBT X波段混合集成功率合成放大器的研制(英文)

作　　者：陈延湖[1] 申华军[2] 王显泰[2] 陈高鹏[2] 刘新宇[2] 袁东风[1] 王祖强[1] 

机构地区：[1]山东大学信息科学与工程学院,济南250100 [2]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第11期2098-2100,共3页半导体学报（英文版）

摘　　要：A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit. A compact mi- crostripe line parallel matching network is used to divide and combine the power. By biasing the amplifier at class AB： Vc= 7V, Ic = 230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8. 1GHz.研制了面向X波段应用的InGaP/GaAs HBT混合集成功率合成放大器模块.电路采用一种新颖的具有片上RC稳定网络的In-GaP/GaAs HBT功率管作为功率合成单元以提高电路的稳定性,并采用紧凑的微带线并联匹配网络进行功率分配和合成.在8.1GHz,偏置为Vcc=7V,Ic=230mA的AB类工作条件下,连续波最大输出功率为28.9dBm,功率合成效率达到80%.

关 键 词：InGaP/GaAs HBT power combining MIC power amplifiers 

分 类 号：TN722.75[电子电信—电路与系统]