非晶硅薄膜的红外热敏特性  

Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD

作　　者：马铁英[1,2] 李铁[2] 刘文平[2] 王跃林[2] 

机构地区：[1]中国计量学院光学与电子科技分院,杭州310018 [2]中国科学院微系统与信息技术研究所传感技术国家重点实验室,上海200050

出　　处：《Journal of Semiconductors》2008年第11期2265-2269,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:2006CB300406);上海AM基金(批准号:0402)资助项目~~

摘　　要：用PECVD技术制备了不同掺磷比的非晶硅薄膜,然后退火改性.红外透射光谱揭示了薄膜内部的键合模式随生长工艺条件变化的规律;测量和分析了非晶硅红外热吸收及电阻温度系数与薄膜结构之间的关系.综合考虑非晶硅电阻率和电阻温度系数两个因素,采用掺杂比0.025,退火温度600℃的薄膜样品进一步研究.A hydrogenated amorphous silicon of different phosphor doping concentrations is fabricated by PECVD. FTIR spectra and TCR of a-Si：H are obtained after annealing at different temperatures and times. The structure and bonding of the film are decided by different annealing conditions,leading to the change in the thermal and electric characteristics. Lugs model is used to explain the phenomena,and an optimum preparation is attained with a doping ratio of 0. 025 and an annealing temperature of 600℃.

关 键 词：非晶硅 退火 红外透射 电阻温度系数 

分 类 号：TN304.12[电子电信—物理电子学]