纳米硅薄膜微结构变化对薄膜光电性质的影响  

The Influence of Microstructure Changing of nc-Si: H Films on the Optical and Electric Properties

作　　者：余明斌[1] 王燕[1] 马爱华[1] 刘满仓[1] 

机构地区：[1]西安理工大学理学院

出　　处：《西安理工大学学报》1997年第4期320-323,共4页Journal of Xi'an University of Technology

基　　金：机械工业部科技基金!96251412

摘　　要：用退火的方法改变了纳米桂（nc－Si：H）薄膜的微结构。用Raman散射和共振核反应方法分析了薄膜的微结构变化。结果表明，薄膜的氢含量是影响薄膜光学带隙的主要因素，而薄膜的晶态体积比和晶粒尺寸是影响薄膜电导率的主要因素。The structures of nanocrystalline silicon films (nc-Si: H) are changed by high tem-perature annealing. The hydrogen content (CH) of nc-Si: H is determined by resonant nucle-ation reaction analysis. The grain size d and grain volume fraction (Xc) of nc-Si: H are gainedby Raman scattering. It is concluded that CH is the main factor that affect the optical gap whilethe crystalline volume fraction and the grain size are crucial to the conductivity.

关 键 词：纳米硅薄膜 电导率 光学带隙 

分 类 号：TN304.12[电子电信—物理电子学] TN304.055