Nd掺杂ZnO薄膜的制备及室温光致发光研究  

Study on Preparation and Photoluminescence Properties of Nd-doped ZnO Thin Film

作　　者：文军[1,2] 陈长乐[1] 

机构地区：[1]西北工业大学应用物理系,陕西西安710072 [2]渭南师范学院物理系,陕西渭南714000

出　　处：《四川师范大学学报（自然科学版）》2008年第6期732-735,共4页Journal of Sichuan Normal University（Natural Science）

基　　金：国家自然科学基金(50331040);陕西省教育厅科研计划基金(08JK287)资助项目;渭南师范学院科研基金的资助

摘　　要：通过射频磁控溅射技术在Si(111)衬底上制备了Nd掺杂ZnO薄膜.XRD和AFM分析表明,Nd掺杂没有改变ZnO结构,薄膜为纳米多晶结构.随Nd掺杂量的增加颗粒减小,表面粗糙,起伏较大.室温光致发光谱显示,薄膜出现了395nm的强紫光峰和495nm的弱绿光峰,Nd掺杂量和氧分压对PL谱发射峰强度产生了一定影响.The Nd-doped ZnO thin film is deposited on Si（111） substrate by RF magnetron sputtering. The analyses of XRD and AFM show that the structure of the thin film is not disturbed by Nd-doping and the thin film has a nano-multi-crystal structure. The surface of Nd-doped ZnO thin film is rough and the grain diameter of the thin films decreases with the increase of the neodymium content. The photoluminescence spectrum at room temperature indicates that the film has a strong purple band with 395 nm and weak green band with 495 nm, the peak intensity of photoluminescence spectra is affected by neodymium content and oxygen partial pressure.

关 键 词：ND掺杂 ZNO薄膜 射频磁控溅射 光致发光 

分 类 号：O484.1[理学—固体物理] O484.45[理学—物理]