P基区结构对GCT通态特性的影响  

Influence of the Structure of P Base Region on On-state Characteristic of GCT

作　　者：李佳[1] 吴春瑜[1] 康大为[1] 

机构地区：[1]辽宁大学物理学院,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2008年第4期293-295,共3页Journal of Liaoning University：Natural Sciences Edition

基　　金：辽宁省科技厅自然科学基金(002021);辽宁省教育厅科学基金(2004D026)

摘　　要：介绍了非对称型门极换流晶闸管的P基区结构.在建立门极换流晶闸管器件模型基础上,利用MEDICI软件分析了P基区结构对门极换流晶闸管通态特性的影响.模拟结果表明,P基区的掺杂浓度和宽度对门极换流晶闸管通态压降有着重要的影响.通过调节P基区的浓度和宽度,可以有效地改善门极换流晶闸管的通态特性.In this paper, the structure and mechanism of P base region of asymmetry Gate Controlled Thyristor are briefly introduced. On the basis of Gate Controlled Thyristor model, the influence of the structure of P base region on on - state characteristic is analyzed using MEDICI simulator. Simulation results show that the doping profile and width of P base region are important to the on - state voltage drop of Gate Controlled Thyristor. On - state characteristic of Gate Controlled Thyristor can be improved effectively by adjusting the concentration and width of P base region.

关 键 词：门极换流晶闸管 通态压降 P基区 掺杂浓度 

分 类 号：TN342[电子电信—物理电子学]