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作 者:李雅静[1,2] 安振峰[2] 陈国鹰[1] 王晓燕[2] 赵润[2] 杜伟华[1,2] 王薇[1,2]
机构地区:[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《微纳电子技术》2008年第11期635-638,共4页Micronanoelectronic Technology
摘 要:使用三层平板波导理论分析了半导体量子阱激光器远场分布。针对大功率激光器讨论了极窄和模式扩展波导结构方法减小垂直方向远场发散角,得到了极窄波导结构量子阱激光器远场分布的简化模型,获得了垂直发散角的理论值,垂直方向远场发散角减小为28.6°;使用传输矩阵方法模拟了模式扩展波导结构量子阱激光器的近场光斑及远场分布,垂直方向远场发散角减小为16°。实验测试了极窄和模式扩展波导结构量子阱激光器的垂直发散角,理论结果与实验测试获得的发散角基本一致,实现了降低发散角的要求,获得了小发散角量子阱激光器。The far-field distribution of the quantum well semiconductor laser was analyzed by the three-tier flat-panel waveguide theory. Aiming at the high-power laser, the vertical far-field divergence angle was reduced by the very narrow waveguide and the mode expanding waveguide structures, a simplified model of the far-field distribution of quantum-well lasers with a very narrow waveguide structure and the theoretical value of the vertical divergence angle were achieved, the vertical divergence angle was reduced to 28.6°. The near-field spot and far-field distribution of the quantum-well lasers with the mode expanding waveguide structure were simu- lated by the transfer matrix method, the vertical divergence angle was reduced to 16°. The vertical divergence angles of the very narrow waveguide and the mode expanding waveguide structures of quantum-well lasers were tested experimentally. The divergence angles of theoretical result and experimental test were the same basically. Requirements for reducing the divergence angle were realized. The quantum-well laser with a little divergence angle was achieved.
关 键 词:量子阱激光器 极窄波导 模式扩展 波导结构 发散角
分 类 号:TN201[电子电信—物理电子学] TN248.4
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