酸腐多晶硅太阳电池表面织构的研究  

Investigation of acid texturing for polycrystalline silicon solar cells

作　　者：王立建 刘彩池[2] 陈玉武[2] 辛国军[1] 左云翔 章灵军 

机构地区：[1]苏州阿特斯阳光科技电力有限公司,江苏苏州215129 [2]河北工业大学信息功能材料研究所,天津300130

出　　处：《电源技术》2008年第11期784-786,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金(50572022)

摘　　要：多晶硅太阳电池是目前光伏发展的主要趋势,而缺乏有效的表面织构的方法是多晶硅太阳电池发展的一个瓶颈。采用酸腐多晶硅片的方法获得各向同性的表面织构。酸腐蚀液选取HF-HNO3混合溶液并用H2SO4进行改良。分别利用扫描电镜(SEM)和光谱响应系统分析了腐蚀后多晶硅片的表面形貌和反射率。结果表明,酸腐多晶硅表面分布均匀的蠕虫状腐蚀坑,反射率很低,在PECVDSiNx减反射膜后反射率大大下降。Polycrystalline solar cell is the main trend in PV industry at present. Lack of good texturing method is the bottleneck for development of poly-Si solar cell. Polycrystalline silicon wafers were isotropically textured by acid texturing methods. The acid etching solution was mixture of nitric acid （HNO3） and hydrofluoric acid （HF） for the investigation and modified with H2SO4.The polycrystalline silicon surface morphology and reflectance were analyzed by scanning electron microscope （SEM） and spectrum response system respectively. The results show that the surface etched by acid solution is distributed with uniform worm-like etched-pits and very low reflectance. After PECVD SiNx the reflectance decreases remarkably.

关 键 词：表面织构 多晶硅 太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]